Browsing by Author Smith, P. V.

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Showing results 1 to 14 of 14
Issue DateTitleAuthor(s)Citation
2011Dimer pinning and the assignment of semiconductor-adsorbate surface structuresWarschkow, Oliver; Belcher, Daniel; Radny, Marian W.; Schofield, Steven; Smith, P. V.; PhysicsDimer pinning and the assignment of semiconductor-adsorbate surface structures, Journal of Chemical Physics, vol.134, 6, 2011,pp 064709-1-064709-9
2007Doping and STM tip-induced changes to single dangling bonds on Si(001)Marks, Nigel; McKenzie, David; Warschkow, Oliver; Curson, N. J.; Radny, Marian W.; Reusch, Thilo C G; Simmons, M.Y.; Smith, P. V.; Physics; Physics; PhysicsDoping and STM tip-induced changes to single dangling bonds on Si(001), Surface Science, vol.601,(18),2007,pp 4036-4040
2012Guided self-assembly of metal atoms on silicon using organic-molecule templatingWarschkow, Oliver; Belcher, Daniel; Radny, Marian W.; Schofield, Steven; Smith, P. V.; PhysicsGuided self-assembly of metal atoms on silicon using organic-molecule templating, Journal of the American Chemical Society, vol.134, 37, 2012,pp 15312-15317
2006Importance of charging in atomic resolution scanning tunneling microscopy: study of single phosphorous atom in a Si(001) surfaceMarks, Nigel; McKenzie, David; Warschkow, Oliver; Wilson, Hugh; Curson, N. J.; Radny, Marian W.; Reusch, T. C. G.; Schofield, Stephen R; Simmons, M. Y.; Smith, P. V.; Physics; Physics; Physics; PhysicsImportance of charging in atomic resolution scanning tunneling microscopy: study of single phosphorous atom in a Si(001) surface, Physical Review B (Condensed Matter and Materials Physics), vol.74,(N/A),2006,pp 113311-1-113311-4
2005Molecular dissociation of group-V hydrides on Si(001)Marks, Nigel; McDonell, Trevor; Warschkow, Oliver; Wilson, Hugh; Radny, Marian W.; Smith, P. V.; Physics; Physics; Physics; PhysicsMolecular dissociation of group-V hydrides on Si(001), Physical Review B (Condensed Matter and Materials Physics), vol.72,(19),2005,pp 193307-1-193307-4
2013Phenyl attachment to Si(001) via STM manipulation of acetophenoneWarschkow, Oliver; Belcher, Daniel; Radny, Marian W.; Rahnejat, K.A.; Schofield, Steven; Smith, P. V.; PhysicsPhenyl attachment to Si(001) via STM manipulation of acetophenone, The Journal of Physical Chemistry Part C: Nanomaterials and Interfaces, vol.117, 11, 2013,pp 5736-5741
2005Phosphine adsorption and dissociation on the Si(001) surface: An ab initio survey of structuresMarks, Nigel; McKenzie, David; Warschkow, Oliver; Wilson, Hugh; Curson, N. J.; Radny, Marian W.; Schofield, Stephen R; Simmons, M.Y.; Smith, P. V.; Physics; Physics; Physics; PhysicsPhosphine adsorption and dissociation on the Si(001) surface: An ab initio survey of structures, Physical Review B (Condensed Matter and Materials Physics), vol.72,(12),2005,pp 125328-1-125328-15
2006Phosphine dissociation and diffusion on Si(001) observed at the atomic scaleMarks, Nigel; McKenzie, David; Warschkow, Oliver; Clark, R J; Curson, N. J.; Radny, Marian W.; Schofield, Stephen R; Simmons, M. Y.; Smith, P. V.; Wilson, Hugh F; Physics; Physics; PhysicsPhosphine dissociation and diffusion on Si(001) observed at the atomic scale, The Journal of Physical Chemistry Part B: Condensed Matter, Materials, Surfaces, Interfaces & Biophysical, vol.110,(7),2006,pp 3173-3179
2004Phosphine Dissociation On The Si(001) SurfaceMarks, Nigel; McKenzie, David; Warschkow, Oliver; Wilson, Hugh; Curson, N. J.; Radny, Marian W.; Schofield, Stephen R; Simmons, M.Y.; Smith, P. V.; Physics; Physics; Physics; PhysicsPhosphine Dissociation On The Si(001) Surface, Physical Review Letters, vol.93,(22),2004,pp 226102-1-226102-4
2016Reaction paths of phosphine dissociation on silicon (001)Marks, Nigel; McKenzie, David; Warschkow, Oliver; Wilson, Hugh; Curson, N J; Radny, M. W.; Reusch, T. C. G.; Schofield, S R; Simmons, M Y; Smith, P. V.; Physics; Physics; Physics; PhysicsReaction paths of phosphine dissociation on silicon (001), Journal of Chemical Physics, vol.144, 1, 2016,pp 1-17
2007Single Hydrogen Atoms on the Si(001) SurfaceMarks, Nigel; McKenzie, David; Warschkow, Oliver; Wilson, Hugh; Curson, N. J.; Radny, Marian W.; Reusch, Thilo C G; Schofield, Stephen R; Simmons, M.Y.; Smith, P. V.; Physics; Physics; Physics; PhysicsSingle Hydrogen Atoms on the Si(001) Surface, Physical Review B (Condensed Matter and Materials Physics), vol.76,(15),2007,pp 155302-1-155302-13
2007Single P and As dopants in the Si(001) surfaceMarks, Nigel; McKenzie, David; Shi, Hongqing; Warschkow, Oliver; Curson, N. J.; Radny, Marian W.; Reusch, Thilo C G; Schofield, Stephen R; Simmons, M.Y.; Smith, P. V.; Physics; Physics; Physics; PhysicsSingle P and As dopants in the Si(001) surface, Journal of Chemical Physics, vol.127,(18),2007,pp 184706-1-184706-9
2006Thermal dissociation & desorption of PH3 on Si(001): A reinterpretation of spectroscopic dataMarks, Nigel; McKenzie, David; Warschkow, Oliver; Wilson, Hugh; Curson, N. J.; Radny, Marian W.; Reusch, Thilo C G; Schofield, Stephen R; Simmons, M. Y.; Smith, P. V.; Physics; Physics; Physics; PhysicsThermal dissociation & desorption of PH3 on Si(001): A reinterpretation of spectroscopic data, Physical Review B (Condensed Matter and Materials Physics), vol.74,(N/A),2006,pp 195310-1-195310-10
2008Water on silicon (001): C defects and initial steps of surface oxidationMarks, Nigel; McKenzie, David; Warschkow, Oliver; Radny, Marian W.; Schofield, Stephen R; Smith, P. V.; Physics; Physics; PhysicsWater on silicon (001): C defects and initial steps of surface oxidation, Physical Review B (Condensed Matter and Materials Physics), vol.77,(20),2008,pp 201305-1-201305-4