Browsing by Author Radny, Marian W.

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 1 to 20 of 25  next >
Issue DateTitleAuthor(s)Citation
2011Acetic acid on silicon (001): An exercise in chemical analogyWarschkow, Oliver; Belcher, Daniel; Radny, Marian W.; Schofield, Steven; Smith, Phillip V.; PhysicsAcetic acid on silicon (001): An exercise in chemical analogy, Physical Review B (Condensed Matter and Materials Physics), vol.84, 15, 2011,pp 153302-1-153302-6
2009Acetone on silicon (001): ambiphilic molecule meets ambiphilic surfaceGao, Irene; Warschkow, Oliver; Belcher, Daniel; Radny, Marian W.; Saraireh, Sherin A; Schofield, Steven; Smith, Phillip V.; Physics; PhysicsAcetone on silicon (001): ambiphilic molecule meets ambiphilic surface, Physical Chemistry Chemical Physics, vol.11, 15,pp 2747-2759
2010Adsorption of 2-chlorophenol on Cu2O(111)-Cu-CUS: A first-principles density functional studySoon, Aloysius; Stampfl, Catherine; Alterawneh, M; Dlugogorski, Bogdan Z.; Kennedy, Eric M.; Mackie, John; Radny, Marian W.; Smith, Phillip V.; Physics; PhysicsAdsorption of 2-chlorophenol on Cu2O(111)-Cu-CUS: A first-principles density functional study, Applied Surface Science, vol.256, 15,pp 4764-4770
2009Carbonyl mediated attachment to silicon: Acetaldehyde on Si(001)Warschkow, Oliver; Belcher, Daniel; Radny, Marian W.; Schofield, Steven; Smith, Phillip V.; PhysicsCarbonyl mediated attachment to silicon: Acetaldehyde on Si(001), Journal of Chemical Physics, vol.131, 10,pp 104707-1-104707-8
2011Chlorination of the Cu(110) surface and copper nanoparticles: A density functional theory studyMackie, John; Dlugogorski, Bogdan Z.; Gladys, M J; Kennedy, Eric M.; Radny, Marian W.; Smith, Phillip V.; Suleiman, Ibrahim; ChemistryChlorination of the Cu(110) surface and copper nanoparticles: A density functional theory study, The Journal of Physical Chemistry Part C: Nanomaterials and Interfaces, vol.115, 27, 2011,pp 13412-13419
2010Comment on "Transformation of C-type defects on Si(100)-2 x 1 surface at room temperature STM/STS study [Surf. Sci. 602 (2008) 2835]"McKenzie, David; Warschkow, Oliver; Marks, Nigel; Radny, Marian W.; Schofield, Steven; Smith, Phillip V.; Physics; PhysicsComment on "Transformation of C-type defects on Si(100)-2 x 1 surface at room temperature STM/STS study [Surf. Sci. 602 (2008) 2835]", Surface Science, vol.604, 2,pp 235-236
2011Dimer pinning and the assignment of semiconductor-adsorbate surface structuresWarschkow, Oliver; Belcher, Daniel; Radny, Marian W.; Schofield, Steven; Smith, P. V.; PhysicsDimer pinning and the assignment of semiconductor-adsorbate surface structures, Journal of Chemical Physics, vol.134, 6, 2011,pp 064709-1-064709-9
2007Doping and STM tip-induced changes to single dangling bonds on Si(001)Marks, Nigel; McKenzie, David; Warschkow, Oliver; Curson, N. J.; Radny, Marian W.; Reusch, Thilo C G; Simmons, M.Y.; Smith, P. V.; Physics; Physics; PhysicsDoping and STM tip-induced changes to single dangling bonds on Si(001), Surface Science, vol.601,(18),2007,pp 4036-4040
2009A first-principles density functional study of chlorophenol adsorption on Cu2O(110):CuOSoon, Aloysius; Stampfl, Catherine; Altarawneh, Mohammednoor; Dlugogorski, Bogdan Z.; Kennedy, Eric M.; Mackie, John; Radny, Marian W.; Smith, Phillip V.; Physics; PhysicsA first-principles density functional study of chlorophenol adsorption on Cu2O(110):CuO, Journal of Chemical Physics, vol.130, 18, 2009,pp 184505-1-184505-7
2012Guided self-assembly of metal atoms on silicon using organic-molecule templatingWarschkow, Oliver; Belcher, Daniel; Radny, Marian W.; Schofield, Steven; Smith, P. V.; PhysicsGuided self-assembly of metal atoms on silicon using organic-molecule templating, Journal of the American Chemical Society, vol.134, 37, 2012,pp 15312-15317
2006Importance of charging in atomic resolution scanning tunneling microscopy: study of single phosphorous atom in a Si(001) surfaceMarks, Nigel; McKenzie, David; Warschkow, Oliver; Wilson, Hugh; Curson, N. J.; Radny, Marian W.; Reusch, T. C. G.; Schofield, Stephen R; Simmons, M. Y.; Smith, P. V.; Physics; Physics; Physics; PhysicsImportance of charging in atomic resolution scanning tunneling microscopy: study of single phosphorous atom in a Si(001) surface, Physical Review B (Condensed Matter and Materials Physics), vol.74,(N/A),2006,pp 113311-1-113311-4
2005Molecular dissociation of group-V hydrides on Si(001)Marks, Nigel; McDonell, Trevor; Warschkow, Oliver; Wilson, Hugh; Radny, Marian W.; Smith, P. V.; Physics; Physics; Physics; PhysicsMolecular dissociation of group-V hydrides on Si(001), Physical Review B (Condensed Matter and Materials Physics), vol.72,(19),2005,pp 193307-1-193307-4
2013Phenyl attachment to Si(001) via STM manipulation of acetophenoneWarschkow, Oliver; Belcher, Daniel; Radny, Marian W.; Rahnejat, K.A.; Schofield, Steven; Smith, P. V.; PhysicsPhenyl attachment to Si(001) via STM manipulation of acetophenone, The Journal of Physical Chemistry Part C: Nanomaterials and Interfaces, vol.117, 11, 2013,pp 5736-5741
2005Phosphine adsorption and dissociation on the Si(001) surface: An ab initio survey of structuresMarks, Nigel; McKenzie, David; Warschkow, Oliver; Wilson, Hugh; Curson, N. J.; Radny, Marian W.; Schofield, Stephen R; Simmons, M.Y.; Smith, P. V.; Physics; Physics; Physics; PhysicsPhosphine adsorption and dissociation on the Si(001) surface: An ab initio survey of structures, Physical Review B (Condensed Matter and Materials Physics), vol.72,(12),2005,pp 125328-1-125328-15
2006Phosphine dissociation and diffusion on Si(001) observed at the atomic scaleMarks, Nigel; McKenzie, David; Warschkow, Oliver; Clark, R J; Curson, N. J.; Radny, Marian W.; Schofield, Stephen R; Simmons, M. Y.; Smith, P. V.; Wilson, Hugh F; Physics; Physics; PhysicsPhosphine dissociation and diffusion on Si(001) observed at the atomic scale, The Journal of Physical Chemistry Part B: Condensed Matter, Materials, Surfaces, Interfaces & Biophysical, vol.110,(7),2006,pp 3173-3179
2004Phosphine Dissociation On The Si(001) SurfaceMarks, Nigel; McKenzie, David; Warschkow, Oliver; Wilson, Hugh; Curson, N. J.; Radny, Marian W.; Schofield, Stephen R; Simmons, M.Y.; Smith, P. V.; Physics; Physics; Physics; PhysicsPhosphine Dissociation On The Si(001) Surface, Physical Review Letters, vol.93,(22),2004,pp 226102-1-226102-4
2011Quantum chemical study of copper (II) chloride and the Deacon reactionMackie, John; Dlugogorski, Bogdan Z.; Kennedy, Eric M.; Radny, Marian W.; Suleiman, Ibrahim; ChemistryQuantum chemical study of copper (II) chloride and the Deacon reaction, Chemical Physics Letters, vol.501, 4-6, 2011,pp 215-220
2007Single Hydrogen Atoms on the Si(001) SurfaceMarks, Nigel; McKenzie, David; Warschkow, Oliver; Wilson, Hugh; Curson, N. J.; Radny, Marian W.; Reusch, Thilo C G; Schofield, Stephen R; Simmons, M.Y.; Smith, P. V.; Physics; Physics; Physics; PhysicsSingle Hydrogen Atoms on the Si(001) Surface, Physical Review B (Condensed Matter and Materials Physics), vol.76,(15),2007,pp 155302-1-155302-13
2007Single P and As dopants in the Si(001) surfaceMarks, Nigel; McKenzie, David; Shi, Hongqing; Warschkow, Oliver; Curson, N. J.; Radny, Marian W.; Reusch, Thilo C G; Schofield, Stephen R; Simmons, M.Y.; Smith, P. V.; Physics; Physics; Physics; PhysicsSingle P and As dopants in the Si(001) surface, Journal of Chemical Physics, vol.127,(18),2007,pp 184706-1-184706-9
2007Single Phosphorus Atoms in Si(001): Doping-Induced Charge Transfer into Isolated Si Dangling Bonds.Marks, Nigel; McKenzie, David; Warschkow, Oliver; Curson, N J; Radny, Marian W.; Reusch, Thilo C G; Simmons, M.Y.; Smith, Phillip; Physics; Physics; PhysicsSingle Phosphorus Atoms in Si(001): Doping-Induced Charge Transfer into Isolated Si Dangling Bonds., The Journal of Physical Chemistry Part C: Nanomaterials and Interfaces, vol.111,(17),2007,pp 6428-6433