Browsing by Author Freeman, A. J.

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Showing results 1 to 13 of 13
Issue DateTitleAuthor(s)Citation
2008Built-in electric field assisted spin injection in Cr and Mn delta-layer doped AlN/GaN(0001) heterostructures from first principlesCui, Xiangyuan (Carl); Stampfl, Catherine; Delley, Bernard; Freeman, A. J.; Medvedeva, J E; Aerospace Mech & M'tronic Eng; PhysicsBuilt-in electric field assisted spin injection in Cr and Mn delta-layer doped AlN/GaN(0001) heterostructures from first principles, Physical Review B (Condensed Matter and Materials Physics), vol.78, N/A, 2008,pp 245317-1-245317-15
2010Continuously tunable band gap in GaN/AlN (0001) superlattices via built-in electric fieldCarter, Damien; Cui, Xiangyuan (Carl); Stampfl, Catherine; Delley, Bernard; Freeman, A. J.; Fuchs, M.; Wei, Su-Huai; Physics; Aerospace Mech & M'tronic Eng; PhysicsContinuously tunable band gap in GaN/AlN (0001) superlattices via built-in electric field, Physical Review B (Condensed Matter and Materials Physics), vol.81, 15, 2010,pp 155301-1-155301-5
2007Embedded clustering in Cr-doped AlN: Evidence for general behavior in dilute magnetic III-nitride semiconductorsCui, Xiangyuan; Fernandez Hevia, Daniel; Stampfl, Catherine; Delley, Bernard; Freeman, A. J.; Physics; Physics; PhysicsEmbedded clustering in Cr-doped AlN: Evidence for general behavior in dilute magnetic III-nitride semiconductors, Journal of Applied Physics, vol.101,(10),2007,pp 103917 - 1-103917 - 6
2009First-principles investigation of Mn -layer doped GaN/AlN/GaN (0001) tunneling junctionsCui, Xiangyuan; Stampfl, Catherine; Delley, Bernard; Freeman, A. J.; Physics; PhysicsFirst-principles investigation of Mn -layer doped GaN/AlN/GaN (0001) tunneling junctions, Journal of Applied Physics, vol.106, 4,pp 043711-1-043711-9
2005Half-metallicity and efficient spin injection in AlN/GaN : Cr (0001) heterostructureCui, Xiangyuan; Stampfl, Catherine; Freeman, A. J.; Medvedeva, J E; Newman, N; Physics; PhysicsHalf-metallicity and efficient spin injection in AlN/GaN : Cr (0001) heterostructure, Physical Review Letters, vol.94,(14),2005,pp 146602-1-146602-4
2006Magnetic metastability in tetrahedrally bonded magnetic III-Nitride semiconductorsCui, Xiangyuan; Stampfl, Catherine; Delley, Bernard; Freeman, A. J.; Physics; PhysicsMagnetic metastability in tetrahedrally bonded magnetic III-Nitride semiconductors, Physical Review Letters, vol.97,(1),2006,pp 016402-1-016402-4
2007Neutral and charged embedded clusters of Mn in doped GaN from first principlesCui, Xiangyuan; Stampfl, Catherine; Delley, Bernard; Freeman, A. J.; Physics; PhysicsNeutral and charged embedded clusters of Mn in doped GaN from first principles, Physical Review B (Condensed Matter and Materials Physics), vol.76,(4),2007,pp 045201-1-045201-12
2005Role of embedded Clustering in Dilute Magnetic Semiconductors: Cr Doped GaNCui, Xiangyuan; Stampfl, Catherine; Delley, Bernard; Freeman, A. J.; Medvedeva, J E; Newman, N; Physics; PhysicsRole of embedded Clustering in Dilute Magnetic Semiconductors: Cr Doped GaN, Physical Review Letters, vol.95,(25),2005,pp 256404-1-256404-4
2007Spatial distribution and magnetism in poly-Cr-doped GaN from first principlesCui, Xiangyuan; Stampfl, Catherine; Delley, Bernard; Freeman, A. J.; Medvedeva, J E; Physics; PhysicsSpatial distribution and magnetism in poly-Cr-doped GaN from first principles, Physical Review B (Condensed Matter and Materials Physics), vol.75,(15),2007,pp 155205-1-155205-13
2005Stable and metastable structures of the multiphase tantalum nitride systemStampfl, Catherine; Freeman, A. J.; PhysicsStable and metastable structures of the multiphase tantalum nitride system, Physical Review B (Condensed Matter and Materials Physics), vol.71,(2),2005,pp 024111-1-024111-5
2012Structure and stability of transition metal nitride interfaces from first-principles: AlN/VN, AlN/TiN, and VN/TiNStampfl, Catherine; Freeman, A. J.; PhysicsStructure and stability of transition metal nitride interfaces from first-principles: AlN/VN, AlN/TiN, and VN/TiN, Applied Surface Science, vol.258, 15, 2012,pp 5638-5645
2009Tunnel magnetoresistance in trilayer junctions from first principles: Cr - layer doped GaN/AlN/GaN (0 0 0 1)Cui, Xiangyuan; Stampfl, Catherine; Delley, Bernard; Freeman, A. J.; Physics; PhysicsTunnel magnetoresistance in trilayer junctions from first principles: Cr - layer doped GaN/AlN/GaN (0 0 0 1), Journal of Magnetism and Magnetic Materials, vol.322, 4,pp 395-399
2010Tunnel magnetoresistance in trilayer junctions from first principles: Cr delta-layer doped GaN/AlN/GaN (0001)Cui, Xiangyuan; Stampfl, Catherine; Delley, Bernard; Freeman, A. J.; Physics; PhysicsTunnel magnetoresistance in trilayer junctions from first principles: Cr delta-layer doped GaN/AlN/GaN (0001), Journal of Magnetism and Magnetic Materials, vol.322, 4,pp 395-399