Browsing by Author Carter, Damien

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Showing results 1 to 12 of 12
Issue DateTitleAuthor(s)Citation
2009Atomic and electronic structure of single and multiple vacancies in GaN nanowires from first-principlesCarter, Damien; Stampfl, Catherine; Physics; PhysicsAtomic and electronic structure of single and multiple vacancies in GaN nanowires from first-principles, Physical Review B (Condensed Matter and Materials Physics), vol.79, 19, 2009,pp 195302-1-195302-14
2015Bottom-up assembly of metallic germaniumWarschkow, Oliver; Capellini, Giovanni; Carter, Damien; Hamilton, Alexander; Jaeger, David; Klesse, Wolfgang; Marks, Nigel; Scappucci, Giordano; Simmons, Michelle; Yeoh, LaReine; PhysicsBottom-up assembly of metallic germanium, Scientific Reports, vol.5, N/A, 2015,pp 1-7
2010Continuously tunable band gap in GaN/AlN (0001) superlattices via built-in electric fieldCarter, Damien; Cui, Xiangyuan (Carl); Stampfl, Catherine; Delley, Bernard; Freeman, A. J.; Fuchs, M.; Wei, Su-Huai; Physics; Aerospace Mech & M'tronic Eng; PhysicsContinuously tunable band gap in GaN/AlN (0001) superlattices via built-in electric field, Physical Review B (Condensed Matter and Materials Physics), vol.81, 15, 2010,pp 155301-1-155301-5
2009Electronic structure models of phosphorus delta-doped siliconCarter, Damien; McKenzie, David; Warschkow, Oliver; Marks, Nigel; Physics; Physics; PhysicsElectronic structure models of phosphorus delta-doped silicon, Physical Review B (Condensed Matter and Materials Physics), vol.79, 3, 2009,pp 033204-1-033204-4
2013Electronic structure of phosphorus and arsenic δ-doped germaniumMcKenzie, David; Warschkow, Oliver; Capellini, Giovanni; Carter, Damien; Gale, Julian D; Klesse, Wolfgang; Marks, Nigel; Rohl, Andrew L; Scappucci, Giordano; Simmons, Michelle; Physics; PhysicsElectronic structure of phosphorus and arsenic δ-doped germanium, Physical Review B (Condensed Matter and Materials Physics), vol.88, 11, 2013,pp 1-10
2013Electronic structure of two interacting phosphorus d-doped layers in siliconMcKenzie, David; Warschkow, Oliver; Carter, Damien; Marks, Nigel; Physics; PhysicsElectronic structure of two interacting phosphorus d-doped layers in silicon, Physical Review B (Condensed Matter and Materials Physics), vol.87, 4, 2013,pp 1-8
2010Gallium Nitride NanowiresCarter, Damien; Stampfl, Catherine; Physics; PhysicsGallium Nitride Nanowires in Handbook of Nanophysics: Nanotubes and Nanowires, CRC Press, 2010, pp. 18-1-18-17
2008Geometry and diameter dependence of the electronic and physical properties of GaN nanowires from first principlesCarter, Damien; Stampfl, Catherine; Delley, Bernard; Gale, Julian D; Physics; PhysicsGeometry and diameter dependence of the electronic and physical properties of GaN nanowires from first principles, Physical Review B (Condensed Matter and Materials Physics), vol.77, 11, 2008,pp 115349-1-115349-12
2007Mechanisms of dye incorporation into potassium sulfate: Computational and experimental studiesCarter, Damien; Ogden, Mark I.; Rohl, Andrew L; PhysicsMechanisms of dye incorporation into potassium sulfate: Computational and experimental studies, The Journal of Physical Chemistry Part C: Nanomaterials and Interfaces, vol.111,(26),2007,pp 9283-9289
2011Phosphorus δ-doped silicon: mixed-atom pseudopotentials and dopant disorder effectsMcKenzie, David; Warschkow, Oliver; Carter, Damien; Marks, Nigel; Physics; PhysicsPhosphorus δ-doped silicon: mixed-atom pseudopotentials and dopant disorder effects, Nanotechnology, vol.22, 6, 2011,pp 1-10
2009Quantum confinement effects in gallium nitride nanostructures: ab initio investigationsCarter, Damien; Puckeridge, Max; Stampfl, Catherine; Delley, Bernard; Physics; Chemistry; PhysicsQuantum confinement effects in gallium nitride nanostructures: ab initio investigations, Nanotechnology, vol.20,(42),2009,pp 425401-1-425401-5
2012Vacancies in GaN bulk and nanowires: Effect of self-interaction correctionsStampfl, Catherine; Carter, Damien; Fuchs, M.; PhysicsVacancies in GaN bulk and nanowires: Effect of self-interaction corrections, Journal of Physics: Condensed Matter, vol.24, 25, 2012,pp 1-8